型号 SI3451DV-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH 20V 2.8A 6-TSOP
SI3451DV-T1-GE3 PDF
代理商 SI3451DV-T1-GE3
标准包装 3,000
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 2.8A
开态Rds(最大)@ Id, Vgs @ 25° C 115 毫欧 @ 2.6A,4.5V
Id 时的 Vgs(th)(最大) 1.5V @ 250µA
闸电荷(Qg) @ Vgs 5.1nC @ 5V
输入电容 (Ciss) @ Vds 250pF @ 10V
功率 - 最大 2.1W
安装类型 表面贴装
封装/外壳 6-TSOP(0.065",1.65mm 宽)
供应商设备封装 6-TSOP
包装 带卷 (TR)
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